- Teacher: Shikha Shukla
Course Code: B01U0903T Full Marks: 100, Credit: 4
Course Name: Electronics
Course outcomes (CO): At the end of the course, the student will be able to learn :
|
CO1 |
Power bipolar junction transistor, Power MOSFET, Junction Transistor, Silicon controlled rectifier applications |
|
CO2 |
Schottky Barrier FET (MES FET) avalanche and transit time Tunnel diode. |
|
CO3 |
Electron – Hole pair generation, Light emitting diode, Photoconductivity Cell, Photodiode applications |
|
CO4 |
Complementary metal oxide semiconductor, Static random access memory |
Course Details:
Unit I-Basics of Operational Amplifier: Differential Amplifier, DC analysis, AC analysis, inverting and non-inverting inputs, CMRR, constant current bias, Integrated circuits and pin identification, Open Loop Operational Amplifier Configurations (Differential, Inverting and Non-inverting) Op-Amp with negative feedback, voltage series and shunt feedback, input resistance, output resistance, bandwidth and output offset voltage, voltage follower. Practical Op-Amp input offset voltage, input bias current, input offset current, total output offset voltage, CMRR frequency response.
Unit II - OpAmp Applications: Addition, Subtraction, Summing, scaling and averaging amplifier, Integrator and differentiator, Logarithmic and anti logarithmic amplifier, Phase shift, Wein bridge, LC tunable oscillators, Square wave and Triangular wave generators, Comparators, Schmitt trigger, V/F and F/V converter, A/D and D/A converters, Sample and hold circuit, multivibrators.
Unit III- Memory devices: Complementary metal oxide scmi conductor (CMOS), MOSFET transistors as n-channel (NMOS), Static random acces s memory (SRAM) and dynamic random access memory (DRAM), Read only memory (ROM), electrically programmable ROM (EPROM) and electrically erasable programmable ROM (EEPROM), volatile and non volatile memory,
Unit IV-High frequency devices: Frequency dependence of gain, transit time effect in bipolar and in field effect transistors, Schottky Barrier FET (MES FET), modulation doped transistor (MODFET or HEMT) , Ballistic transistors- Metal base transistors, ballistic GaAs Transistors Two terminal devices- Gunn diode, Impact avalanche and transit time (IMPATT) diode Tunnel diode.
Text and Reference books:
1. Optical Electronics by A.Ghatak and K.Thygrajan, 1E, Cambridge University Press, 2012.
2. Introduction to semiconductor materials and devices by M.S.Tyagi, 2E, John Wiley & Sons 2008.
- Teacher: SURESH KUMAR SHARMA,
- Teacher: Shikha Shukla